10 citations · 10 across the 4 of their papers we have counts for
4 papers
Simulation of boron diffusion during low-temperature annealing of implanted silicon
O. I. Velichko, A. P. Kavaliova
Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of…
Interstitial diffusion of ion-implanted boron in crystalline silicon
O. I. Velichko, A. P. Kavaliova
Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.
Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates
O. I. Velichko, A. P. Kavaliova
It has been shown that many of the phenomena related to the formation of "tails" in the low-concentration region of ion-implanted impurity distribution are due to the anomalous dif…
Simulation of ion-implanted boron redistribution under different conditions of the transient enhanced diffusion suppression
O. I. Velichko, A. P. Kavaliova
It has been shown by means of impurity diffusion simulation that ion-implanted boron redistribution at the annealing temperatures 800^{\circ}C and lower is governed by the long-ran…