26 citations · 81 across the 14 of their papers we have counts for
14 papers
Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción +6
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they…
Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings
Gerrit Behner, Abdur Rehman Jalil, Dennis Heffels +9
We present low-temperature magnetotransport measurements on selectively-grown SbTe-based topological insulator ring structures. These topological insulator ring geometries…
Ballistic surface channels in fully in situ defined BiTe Josephson junctions with aluminum contacts
Daniel Rosenbach, Abdur R. Jalil, Tobias W. Schmitt +5
In this letter we report on the electrical transport properties of BiTe in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrie…
Supercurrent in BiTe Topological Material-Based Three-Terminal Junctions
Jonas Kölzer, Abdur Rehman Jalil, Daniel Rosenbach +6
In an in-situ prepared three-terminal Josephson junction based on the topological insulator BiTe and the superconductor Nb the transport properties are studied. The differe…
Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars
Y. Kutovyi, M. M. Jansen, S. Qiao +8
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime a…
Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures
T. Schumann, T. Kleinke, L. Braun +12
We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagn…
Integration of topological insulator Josephson junctions in superconducting qubit circuits
Tobias W. Schmitt, Malcolm R. Connolly, Michael Schleenvoigt +16
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe ex…
Quantum transport in topological surface states of BiTe nanoribbons
Daniel Rosenbach, Nico Oellers, Abdur Rehman Jalil +8
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computat…
Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor
V. Narayan, P. C. Verpoort, J. R. A. Dann +8
We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-e…
Thickness dependence of electron-electron interactions in topological p-n junctions
Dirk Backes, Danhong Huang, Rhodri Mansell +7
Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying rel…
Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Peter Schüffelgen, Daniel Rosenbach, Chuan Li +14
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computati…
Influence of Te-doping on self-catalyzed VS InAs nanowires
Nicholas A. Güsken, Torsten Rieger, Gregor Mussler +2
We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and a…
On the nature of the spin polarization limit in the warped Dirac cone of the Bi2Te3
A. Herdt, L. Plucinski, G. Bihlmayer +6
The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the wa…
Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
N. Hrauda, J. J. Zhang, E. Wintersberger +9
SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ra…