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20102023
most citedQuantum transport in topological surface states of BiTe nanoribbons

26 citations · 81 across the 14 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2023★ 17 cited

Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings

Gerrit Behner, Abdur Rehman Jalil, Dennis Heffels +9

We present low-temperature magnetotransport measurements on selectively-grown SbTe-based topological insulator ring structures. These topological insulator ring geometries…

cond-mat.mes-hall2023

Ballistic surface channels in fully in situ defined BiTe Josephson junctions with aluminum contacts

Daniel Rosenbach, Abdur R. Jalil, Tobias W. Schmitt +5

In this letter we report on the electrical transport properties of BiTe in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrie…

cond-mat.mes-hall2022

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

T. Schumann, T. Kleinke, L. Braun +12

We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagn…

cond-mat.mes-hall2020★ 1 cited

Integration of topological insulator Josephson junctions in superconducting qubit circuits

Tobias W. Schmitt, Malcolm R. Connolly, Michael Schleenvoigt +16

The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe ex…

cond-mat.mes-hall2020★ 26 cited

Quantum transport in topological surface states of BiTe nanoribbons

Daniel Rosenbach, Nico Oellers, Abdur Rehman Jalil +8

Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computat…

cond-mat.mes-hall2018★ 5 cited

Thickness dependence of electron-electron interactions in topological p-n junctions

Dirk Backes, Danhong Huang, Rhodri Mansell +7

Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying rel…

cond-mat.mes-hall2012

On the nature of the spin polarization limit in the warped Dirac cone of the Bi2Te3

A. Herdt, L. Plucinski, G. Bihlmayer +6

The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the wa…

cond-mat.mes-hall2010

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

N. Hrauda, J. J. Zhang, E. Wintersberger +9

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ra…