Quantum transport in topological surface states of Bi${}_2$Te${}_3$ nanoribbons

Abstract

Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi${}_2$Te${}_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si${}_3$N${}_4$/SiO${}_2$ nano-trenches on a silicon (111) substrate followed by a selective area growth process via molecular beam epitaxy. The selective area growth is beneficial to the device quality, as no subsequent fabrication needs to be performed to shape the nanoribbons. Transmission line measurements are performed to evaluate contact resistances of Ti/Au contacts applied as well as the specific resistance of the Bi${}_2$Te${}_3$ binary topological insulator. In the diffusive transport regime of these unintentionally $n$-doped Bi${}_2$Te${}_3$ topological insulator nano Hall bars, we identify distinguishable electron trajectories by analyzing angle-dependent universal conductance fluctuation spectra. When the sample is tilted from a perpendicular to a parallel magnetic field orientation, these high frequent universal conductance fluctuations merge with low frequent Aharonov-Bohm type oscillations originating from the topologically protected surface states encircling the nanoribbon cross section. For 500 nm wide Hall bars we also identify low frequent Shubnikov-de Haas oscillations in the perpendicular field orientation, that reveal a topological high-mobility 2D transport channel, partially decoupled from the bulk of the material.

arXiv comment13 pages, 5 figures, 6 pages supplementary information, 5 supplementary figures

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Cited by in corpus (14)

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• Superconducting diode effect due to magnetochiral anisotropy in topological insulator and Rashba nanowires
• Quantum Transport and Potential of Topological States for Thermoelectricity in Bi${}_2$Te${}_3$ Thin Films
• Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices
• Metallization and proximity superconductivity in topological insulator nanowires
• Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings
• Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi${}_2$Te${}_3$ nanoribbons
• Disorder effects in topological insulator nanowires
• Crossed Andreev reflection in topological insulator nanowire T-junctions
• Fabry-Pérot interferometry with gate-tunable 3D topological insulator nanowires
• In-plane magnetic field driven conductance modulations in topological insulator kinks
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• Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi${}_{0.9}$Sb${}_{0.1}{)}_2$Se${}_3$ single crystal
• In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions