Influence of Te-doping on self-catalyzed VS InAs nanowires

Abstract

We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about $1\times 10^{-5}$ while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is stronger affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure.

References in corpus (4)

• Strong tuning of Rashba spin orbit interaction in single InAs nanowires
• Tunable effective g-factor in InAs nanowire quantum dots
• Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
• A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy