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Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer
V. A. Yuryev, L. V. Arapkina
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunnel…
Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility
Vladimir A. Yuryev, Larisa V. Arapkina
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleatio…
Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots
E. S. Zhukova, B. P. Gorshunov, V. A. Yuryev +6
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been…
An initial phase of Ge hut array formation at low temperature on Si(001)
Larisa V. Arapkina, Vladimir A. Yuryev
We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been…