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The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays
I. V. Kucherenko, V. S. Vinogradov, N. N. Mel'nik +4
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single h…
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…
CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
L. V. Arapkina, V. A. Yuryev
We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sampl…
Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
L. V. Arapkina, V. A. Yuryev, V. M. Shevlyuga +1
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO film decomposition has been in situ investigated by reflected h…
STM and RHEED study of the Si(001)-c(8x8) surface
Larisa V. Arapkina, Vladimir M. Shevlyuga, Vladimir A. Yuryev
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnell…