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Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study
L. V. Arapkina, V. M. Shevlyuga, V. A. Yuryev
A clean Si(001) surface thermally purified in an ultrahigh vacuum molecular-beam epitaxy chamber has been investigated by means of scanning tunneling microscopy. The morphological…
Defects of Ge quantum dot arrays on the Si(001) surface
V. A. Yuryev, L. V. Arapkina
Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on…
Atomic structure of Ge quantum dots on the Si(001) surface
Larisa V Arapkina, Vladimir A Yuryev
In situ morphological investigation of the {105} faceted Ge islands on the Si(001) surface (hut clusters) have been carried out using an ultra high vacuum instrument integrating a…
Nucleation of Ge quantum dots on the Si(001) surface
Larisa V. Arapkina, Vladimir A. Yuryev
A direct observation of nucleation of Ge hut clusters formed by ultrahigh vacuum molecular beam epitaxy is reported for the first time. The nuclei of the pyramidal and wedge-like c…