Defects of Ge quantum dot arrays on the Si(001) surface

Abstract

Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(001) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined.

Reported at the 25th International Conference on Defects in Semiconductors, St. Petersburg, Russia, July 20-24, 2009

References in corpus (1)

• Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study

Cited by in corpus (7)

• Nucleation of Ge quantum dots on the Si(001) surface
• CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
• STM and RHEED study of the Si(001)-c(8x8) surface
• Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
• Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
• On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
• Classification of Ge hut clusters in the arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface