Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots

Abstract

The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed.

arXiv comment9 pages, 4 figures; typos corrected

References in corpus (8)

• Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
• Far-Infrared Excitations below the Kohn Mode: Internal Motion in a Quantum Dot
• Far-infrared edge modes in quantum dots
• Nucleation of Ge quantum dots on the Si(001) surface
• CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
• Classification of Ge hut clusters in the arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface
• Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures
• Terahertz absorption by excitonic polaritons

Cited by in corpus (1)

• Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility