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Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…
Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type co…
Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance
Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang +3
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed…