13 citations · 61 across the 19 of their papers we have counts for
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Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers
V. A. Yuryev, K. V. Chizh, V. A. Chapnin +8
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors…
Application of Scanning Mid-IR-Laser Microscopy for Characterization of Semiconductor Materials for Photovoltaics
V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfu…
Investigation of quantum-dimensional structure parameters by X-ray optical, scanning tunneling and transmission electron microscopy
A. G. Touryanski, V. M. Senkov, S. S. Gizha +7
Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin +3
Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and…
Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-s…
Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity
V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8
Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and i…
Large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +1
Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of elect…
Application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +1
Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of th…
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy…
Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization
V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats +2
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelength…
Influence of Photoexcitation Depth on Luminescence Spectra of Bulk GaAs Single Crystals and Defect Structure Characterization
V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats +2
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelength…
Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a…
On the nature of large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +2
Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulati…
Possibilities of application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +2
A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A cl…
Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non…
Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics
V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfu…
Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials
V. P. Kalinushkin, V. A. Yuryev, O. V. Astafiev
A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructi…