Application of Scanning Mid-IR-Laser Microscopy for Characterization of Semiconductor Materials for Photovoltaics

Abstract

The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ Si${}_x$Ge${}_{1-x}$---a promising material for photovoltaics---and multicrystalline silicon for solar cells.

2 pages, 3 figures. arXiv admin note: text overlap with arXiv:1008.4050