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- Prokhorov General Physics InstituteRU5 papers
- Institute of Physics BelgradeRS2 papers
- Russian Academy of SciencesRU2 papers
- 23andMe (United States)US1 paper
- Academy of Sciences Republic of UzbekistanUZ1 paper
- Al Akhawayn UniversityMA1 paper
- AMIS - Laboratoire d'anthropologie moléculaire et imagerie de synthèseFR1 paper
- Banaras Hindu UniversityIN1 paper
- Bashkir State UniversityRU1 paper
- Belgorod National Research UniversityRU1 paper
- Bioengineering CenterRU1 paper
- Broad InstituteUS1 paper
12 papers
friends.test: rank-based method for feature selection in interaction matrices
Alexandra Suvorikova, Alexey Kroshnin, Dmirijs Lvovs +5
The analysis of the interaction matrix between two distinct sets is essential across diverse fields, from pharmacovigilance to transcriptomics. Not all interactions are equally inf…
On a method of evaluation of zeta-constants based on one number theoretic approach
Ekatherina A. Karatsuba
New formulas for approximation of zeta-constants were derived on the basis of a number-theoretic approach constructed for the irrationality proof of certain classical constants. Us…
Photoluminescence of silicon-vacancy defects in nanodiamonds of different chondrites
A. A. Shiryaev, A. V. Fisenko, L. F. Semjonova +2
Photoluminescence spectra show that silicon impurity is present in lattice of some nanodiamond grains (ND) of various chondrites as a silicon-vacancy (SiV) defect. The relative int…
Ancient human genomes suggest three ancestral populations for present-day Europeans
Iosif Lazaridis, Nick Patterson, Alissa Mittnik +117
We sequenced genomes from a 7,000 year old early farmer from Stuttgart in Germany, an 8,000 year old hunter-gatherer from Luxembourg, and seven 8,000 year old hun…
Application of Scanning Mid-IR-Laser Microscopy for Characterization of Semiconductor Materials for Photovoltaics
V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfu…
Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers
Vladimir Yuryev
Physical processes resulting in the anomalous (cubic) dependence of the small-angle IR scattering intensity from near-surface layers of mechanically polished silicon and germanium…