Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers

Abstract

Physical processes resulting in the anomalous (cubic) dependence of the small-angle IR scattering intensity from near-surface layers of mechanically polished silicon and germanium wafers on the photoexcitation power were revealed. It was shown that extended linear defects and dislocations in the damaged region contribute predominantly to carrier scattering.

A brief note

References in corpus (1)

• Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials