3 papers
cond-mat.mtrl-sci2023
Epitaxial Growth of Boron Carbide on 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +6
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards…
cond-mat.mtrl-sci2022
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
cond-mat.mes-hall2016
Nanodiamond integration with photonic devices
Marina Radulaski, Jingyuan Linda Zhang, Yan-Kai Tzeng +13
We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show t…