Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC

Yamina Benamra, Laurent Auvray, Jérôme Andrieux +7

Heteroepitaxial boron carbide (BxC) can be grown on Si face 4H-SiC(0001) using a two-step process involving substrate boridation at 1200${}^{\circ }$C under BCl3 + H2 followed by a chem…