1 citations · 3 across the 4 of their papers we have counts for
4 papers
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +7
Heteroepitaxial boron carbide (BxC) can be grown on Si face 4H-SiC(0001) using a two-step process involving substrate boridation at 1200C under BCl3 + H2 followed by a chem…
Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500C
Gabriel Ferro, Davy Carole, Didier Chaussende
The thermochromic properties (color change with temperature) of n type doped SiC wafers of different polytypes (3C, 4H and 6H) have been investigated up to 500C under air.…
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
François Cauwet, Yamina Benamra, Laurent Auvray +2
The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, differen…
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Yann Jousseaume, Piyush Kumar, Marianne Etzelmüller Bathen +3
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading dif…