66 citations · 191 across the 8 of their papers we have counts for
4 papers · 1 filter
Epitaxial Growth of Boron Carbide on 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +6
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards…
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers
Jingyuan Linda Zhang, Hitoshi Ishiwata, Thomas M. Babinec +13
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV) color centers in diam…
Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition
Kassem Alassaad, Véronique Soulière, François Cauwet +7
In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface mo…