404 citations · 2.9k across the 41 of their papers we have counts for
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Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure
D. Chen, S. Cai, N. -W. Hsu +7
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently uti…
Spectroscopy of multi-electrode tunnel barriers
A. Shirkhorshidian, John King Gamble, L. Maurer +8
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-elec…
Valley splitting of single-electron Si MOS quantum dots
John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson +10
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy state…
Fabrication of quantum dots in undoped Si/SiGe heterostructures using a single metal-gate layer
T. M. Lu, J. K. Gamble, R. P. Muller +9
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs uti…
Optimization of a solid-state electron spin qubit using Gate Set Tomography
Juan P. Dehollain, Juha T. Muhonen, Robin Blume-Kohout +8
State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates deman…
Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
Ryan H. Foote, Daniel R. Ward, J. R. Prance +8
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wave…