506 citations · 1.3k across the 15 of their papers we have counts for
15 papers
Noise-resistant quantum memory enabled by Hamiltonian engineering
Lei Jing, Peng Du, Hui Tang +1
Nuclear spins in quantum dots are promising candidates for fast and scalable quantum memory. By utilizing the hyperfine interaction between the central electron and its surrounding…
Enhanced measurement precision with continuous interrogation during dynamical decoupling
Jun Zhang, Peng Du, Lei Jing +3
Dynamical decoupling (DD) is normally ineffective when applied to DC measurement. In its straightforward implementation, DD nulls out DC signal as well while suppressing noise. Thi…
Optical-plug-assisted spin vortex in a Rb dipolar spinor Bose-Einstein condensate
Hui Tang, Peng Du, Lei Jing +2
Generating a spin vortex in a Rb dipolar spinor Bose-Einstein condensate in a controllable way is still experimentally challenging. We propose an experimentally easy and tun…
Transport Measurement of Landau level Gaps in Bilayer Graphene
J. Velasco, Y. Lee, Z. Zhao +4
Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy…
Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
Yongjin Lee, Jairo Velasco, David Tran +6
We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2,…
Quantum transport in double-gated graphene devices
J. Velasco, Y. Lee, L. Jing +3
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer,…
Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions
Hang Zhang, Wenzhong Bao, Zeng Zhao +8
Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed b…
Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
Wenzhong Bao, Jairo Velasco, Fan Zhang +6
Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontan…
Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene
J. Velasco, L. Jing, W. Bao +11
The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG a…
Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
W. Bao, L. Jing, Y. Lee +11
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different…
Suspension and Measurement of Graphene and Bi2Se3 Atomic Membranes
Jairo Velasco, Zeng Zhao, Hang Zhang +7
Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two dimens…
Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions
Lei Jing, Jairo Velasco, Philip Kratz +4
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied pe…
Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene
Wenzhong Bao, Zeng Zhao, Hang Zhang +6
We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we obser…
Probing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions
Jairo Velasco, Gang Liu, Lei Jing +4
Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In…
Average Density of States in Disordered Graphene systems
Shangduan Wu, Lei Jing, Qunxiang Li +4
In this paper, the average density of states (ADOS) with a binary alloy disorder in disordered graphene systems are calculated based on the recursion method. We observe an obvious…