Average Density of States in Disordered Graphene systems
arXiv:0711.1018 · doi:10.1103/PhysRevB.77.195411
Abstract
In this paper, the average density of states (ADOS) with a binary alloy disorder in disordered graphene systems are calculated based on the recursion method. We observe an obvious resonant peak caused by interactions with surrounding impurities and an anti-resonance dip in ADOS curves near the Dirac point. We also find that the resonance energy (Er) and the dip position are sensitive to the concentration of disorders (x) and their on-site potentials (v). An linear relation, not only holds when the impurity concentration is low but this relation can be further extended to high impurity concentration regime with certain constraints. We also calculate the ADOS with a finite density of vacancies and compare our results with the previous theoretical results.
10 pages, 8 figures
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Detection of Individual Gas Molecules Absorbed on Graphene
- Electronic Properties of Disordered Two-Dimensional Carbon
- Quantum transport of massless Dirac fermions in graphene
- Zitterbewegung, chirality, and minimal conductivity in graphene
- Disorder Induced Localized States in Graphene
- Transport of Dirac quasiparticles in graphene: Hall and optical conductivities
- Local defects and ferromagnetism in graphene layers
- On the minimal conductivity of graphene
- Electron-electron interactions in graphene sheets
- Impurity States in Graphene
- Transport Length Scales in Disordered Graphene-based Materials: Strong Localization Regimes and Dimensionality Effects
- Robust Transport Properties in Graphene
- Zero-Conductance Resonances due to Flux States in Nanographite Ribbon Junctions
- Impurity effects in a two--dimensional system with Dirac spectrum
- Notes on the minimal longitudinal dc conductivity of perfect bilayer graphene
- Mechanism of magnetism in stacked nanographite: Theoretical study
- Theoretical study on novel electronic properties in nanographite materials
Cited by in corpus (23)
- Making Massless Dirac Fermions from Patterned Two-Dimensional Electron Gases
- Long-range interactions between substitutional nitrogen dopants in graphene: electronic properties calculations
- Quantum Transport in Chemically-modified Two-Dimensional Graphene: From Minimal Conductivity to Anderson Localization
- Vacancy Induced Splitting of Dirac Nodal Point in Graphene
- Density of states in graphene with vacancies: midgap power law and frozen multifractality
- Electronic States and Local Density of States in Graphene with a Corner Edge Structure
- The shape of disorder broadened Landau subbands in graphene
- Electronic Structure in Gapped Graphene with Coulomb Potential
- Numerical simulation evidence of spectrum rearrangement in impure graphene
- Spin dynamics in the Kitaev model with disorder: Quantum Monte Carlo study of dynamical spin structure factor, magnetic susceptibility, and NMR relaxation rate
- Quantitative analytical theory for disordered nodal points [Article and Erratum]
- Electronic Transport in Graphene: Quantum Effects and Role of Local Defects
- Local density of states in disordered graphene
- Accurate evaluation of the Green's function of disordered graphenes
- The effects of disorder and interactions on the Anderson transition in doped Graphene
- Narrow depression in the density of states at the Dirac point in disordered graphene
- Localized and quasi-localized energy levels in the electron spectrum of graphene with isolated boron and nitrogen substitutions
- Effect of doping on the electronic properties of Graphene and T-graphene : A theoretical approach
- Disorder-Induced Phase Transitions in Three-Dimensional Chiral Second-Order Topological Insulator
- Self-consistent model of edge doping in graphene
- Effect of disorder on the electronic properties of graphene: a theoretical approach
- Interplay between edge states and simple bulk defects in graphene nanoribbons
- Universal properties of single particle excitations across the many-body localization transition