115 citations · 270 across the 12 of their papers we have counts for
12 papers
Optimizing high-temperature electron mobility in single-crystal BiOSe based on its unconventional dependence on concentration
Antonín Sojka, Petr Knotek, Jan Zich +10
Quasi-2D BiOSe is part of an intensive materials research effort aimed at finding new semiconductors that outperform silicon-based electronics in terms of speed and power c…
Phonon properties and unconventional heat transfer in quasi-2D crystal
Jan Zich, Antonín Sojka, Petr Levinský +10
Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure a…
Electronic and transport properties of the Mn-doped topological insulator BiTe: A first-principles study
K. Carva, J. Kudrnovský, F. Máca +7
We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator BiTe doped with Mn atoms in substitutional (Mn$_{…
Current induced torques in structures with ultra-thin IrMn antiferromagnet
H. Reichlová, D. Kriegner, V. Holý +8
Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we repo…
Critical role of the sample preparation in experiments using piezoelectric actuators inducing uniaxial or biaxial strains
D. Butkovicova, X. Marti, V. Saidl +4
We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the s…
Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers
L. Horák, J. Matějová, X. Martí +5
Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of…
Molecular Beam Epitaxy of LiMnAs
V. Novak, M. Cukr, Z. Soban +5
We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn…
Strain control of magnetic anisotropy in (Ga,Mn)As microbars
C. King, J. Zemen, K. Olejník +8
We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive la…
Structural and magnetic evidence of confined strain fields in GaMnAs grown on ordered arrays of zero-dimensional nanostructures
X. Marti, T. Cechal, L. Horak +5
We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The…
Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires
A. A. Minkevich, E. Fohtung, T. Slobodskyy +7
Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining th…
K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As
N. A. Goncharuk, L. Smrcka, J. Kucera +5
This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra…
Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration
A. Bonanni, A. Navarro-Quezada, Tian Li +8
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at…