Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires

Abstract

Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices.

5 pages, 5 figures

References in corpus (5)

• Spintronics: Fundamentals and applications
• Theory of ferromagnetic (III,Mn)V semiconductors
• X-ray image reconstruction from a diffraction pattern alone
• High-resolution ab initio three-dimensional X-ray diffraction microscopy
• Inversion of the Diffraction Pattern from an Inhomogeneously Strained Crystal using an Iterative Algorithm

Cited by in corpus (5)

• xrayutilities: A versatile tool for reciprocal space conversion of scattering data recorded with linear and area detectors
• Improved success rate and stability for phase retrieval by including randomized overrelaxation in the hybrid input output algorithm
• Retrieval of the atomic displacements in the crystal from the coherent x-ray diffraction pattern
• Probing the three-dimensional strain inhomogeneity and equilibrium elastic properties of single crystal Ni nanowires
• Manipulating Metastability: Quenched Control of Topological Defects in Multiferroics