activity
20022009
most citedNon-Abelian Anyons and Topological Quantum Computation

7k citations · 17k across the 81 of their papers we have counts for

collaborators
Showing 2007Show all

27 papers · 1 filter

cond-mat.mes-hall200714 cited

Valley interference effects on a donor electron close to a Si/SiO2 interface

M. J. Calderon, Belita Koiller, S. Das Sarma

We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit…

cond-mat.mes-hall200738 cited

Wavefunction considerations for the central spin decoherence problem in a nuclear spin bath

W. M. Witzel, S. Das Sarma

Decoherence of a localized electron spin in a solid state material (the ``central spin'' problem) at low temperature is believed to be dominated by interactions with nuclear spins…

cond-mat.mes-hall2007547 cited

How to Enhance Dephasing Time in Superconducting Qubits

L. Cywinski, R. M. Lutchyn, C. P. Nave +1

We theoretically investigate the influence of designed pulse sequences in restoring quantum coherence lost due to background noise in superconducting qubits. We consider both 1/f n…

cond-mat.mes-hall2007866 cited

Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene

E. H. Hwang, S. Das Sarma

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a func…

cond-mat.mes-hall2007150 cited

Boltzmann transport and residual conductivity in bilayer graphene

Shaffique Adam, S. Das Sarma

A Drude-Boltzmann theory is used to calculate the transport properties of bilayer graphene. We find that for typical carrier densities accessible in graphene experiments, the domin…

cond-mat.mes-hall200775 cited

Transport and percolation in a low-density high-mobility two-dimensional hole system

M. J. Manfra, E. H. Hwang, S. Das Sarma +3

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For hig…