113 citations · 142 across the 4 of their papers we have counts for
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cond-mat.mes-hall2011★ 1 cited
Triangulating tunneling resonances in a point contact
Nathaniel C. Bishop, Ralph W. Young, Gregory A. Ten Eyck +8
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device str…
cond-mat.mes-hall2011★ 24 cited
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
T. M. Lu, N. C. Bishop, T. Pluym +7
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it space…
cond-mat.mes-hall2008★ 113 cited
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
L. A. Tracy, E. H. Hwang, K. Eng +6
By analyzing the temperature () and density () dependence of the measured conductivity () of 2D electrons in the low density (cm) and temperature (0.02…