activity
20082022
most citedElectron spin decoherence in isotope-enriched silicon

156 citations · 1.4k across the 44 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

30 papers · 1 filter

cond-mat.mes-hall2022

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6

Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…

cond-mat.mes-hall2021★ 28 cited

The impact of stochastic incorporation on atomic-precision Si:P arrays

Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…

cond-mat.mes-hall2021★ 47 cited

A silicon singlet-triplet qubit driven by spin-valley coupling

Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph +3

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-…

cond-mat.mes-hall2019★ 2 cited

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

M. J. Curry, M. Rudolph, T. D. England +12

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandw…

cond-mat.mes-hall2018★ 12 cited

All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson +12

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically contro…

cond-mat.mes-hall2017★ 59 cited

Ion Implantation for Deterministic Single Atom Devices

J. L. Pacheco, M. Singh, D. L. Perry +8

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion bea…