58 citations · 115 across the 7 of their papers we have counts for
8 papers
Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
N. Tobias Jacobson, Natalie D. Foster, Ryan M. Jock +5
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface result…
Long-term drift of Si-MOS quantum dots with intentional donor implants
Martin Rudolph, Bahman Sarabi, Roy Murray +2
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-…
Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
M. Rudolph, P. Harvey-Collard, R. Jock +8
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples…
Spectroscopy of multi-electrode tunnel barriers
A. Shirkhorshidian, John King Gamble, L. Maurer +8
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-elec…
Valley splitting of single-electron Si MOS quantum dots
John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson +10
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy state…
Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
A. Shirkhorshidian, N. C. Bishop, J. Dominguez +4
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced…
Capacitance modeling of complex topographical silicon quantum dot structures
H. L. Stalford, R. Young, E. P. Nordberg +3
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitanc…
Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots
Erik Nielsen, Ralph W. Young, Richard P. Muller +1
Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages…