530 citations · 2.3k across the 32 of their papers we have counts for
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Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2
Wei-Ting Hsu, Jiamin Quan, Chi-Ruei Pan +7
Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to crea…
In-situ strain tuning of the Dirac surface states in Bi2Se3 films
David Floetotto, Yang Bai, Yang-Hao Chan +12
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field eff…
Gapped Electronic Structure of Epitaxial Stanene on InSb(111)
Cai-Zhi Xu, Yang-Hao Chan, Peng Chen +7
Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature…
Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement
Yutsung Tsai, Zhaodong Chu, Yimo Han +9
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thi…
Elemental topological Dirac semimetal: α-Sn on InSb(111)
Cai-Zhi Xu, Yang-Hao Chan, Yige Chen +12
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitio…
Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Qiang Zhang, Yuxuan Chen, Chendong Zhang +4
Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic st…