most citedElectronic measurement and control of spin transport in Silicon

724 citations · 1.1k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2007275 cited

Coherent spin transport through a 350-micron-thick Silicon wafer

Biqin Huang, Douwe J. Monsma, Ian Appelbaum

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession…

cond-mat.mtrl-sci200758 cited

Experimental realization of a silicon spin field-effect transistor

Biqin Huang, Douwe J. Monsma, Ian Appelbaum

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic f…

cond-mat.mtrl-sci200727 cited

35% magnetocurrent with spin transport through Si

Biqin Huang, Lai Zhao, Douwe J. Monsma +1

Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In…

cond-mat.mtrl-sci200721 cited

Spin lifetime in silicon in the presence of parasitic electronic effects

Biqin Huang, Douwe J. Monsma, Ian Appelbaum

A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently m…

cond-mat.mtrl-sci2007724 cited

Electronic measurement and control of spin transport in Silicon

Ian Appelbaum, Biqin Huang, Douwe Monsma

The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orde…