A. Bhuiyan

activity

20242026

β

-Ga

_{2}

_{3}

Schottky Barrier Diodes Under High Dose Gamma Radiation

24 citations · 33 across the 10 of their papers we have counts for

collaborators

Showing 2026Show all

7 papers · 1 filter

cond-mat.mtrl-sci2026

HVPE Homoepitaxy of $β$ -Ga $_{2}$ O $_{3}$ : High-Temperature Growth and Orientation-Dependent Surface Evolution

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +2

In this work, we systematically investigate homoepitaxial $β$ -Ga $_{2}$ O $_{3}$ growth by halide vapor phase epitaxy (HVPE) on (010), (001), and ( $2 ˉ$ 01) native substrates over a br…

cond-mat.mtrl-sci2026

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +1

In this work, Sn-doped (010) $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown by low-pressure chemical vapor deposition (LPCVD), and the influence of Sn incorporation on their struct…

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $β$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 d…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $β$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled $n…

physics.app-ph2026

Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan

A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for $β$ -Ga $_{2}$ O$…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…

physics.app-ph2026

HVPE Growth of Si-Doped $β$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped $β$ -Ga $_{2}$ O $_{3}$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

HVPE Homoepitaxy of β-Ga2​O3​: High-Temperature Growth and Orientation-Dependent Surface Evolution

Sn-Doping in LPCVD-Grown (010) β-Ga2​O3​ Films

High-Mobility Ge-Doped β-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) β-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Vertical β-Ga2​O3​ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped β-Ga2​O3​ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

HVPE Homoepitaxy of $β$ -Ga $_{2}$ O $_{3}$ : High-Temperature Growth and Orientation-Dependent Surface Evolution

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped $β$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties