A. Bhuiyan

activity

20242026

β

-Ga

_{2}

_{3}

Schottky Barrier Diodes Under High Dose Gamma Radiation

24 citations · 33 across the 10 of their papers we have counts for

collaborators

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3 papers · 1 filter

cond-mat.mtrl-sci2025

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Guangying Wang, Shuwen Xie, William Brand +10

Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphi…

physics.app-ph2025

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with $β$ -Ga $_{2}$ O $_{3}$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conduc…

physics.app-ph2025★ 9 cited

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates a novel in situ etching technique for $β$ -Ga $_{2}$ O $_{3}$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etchi…

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

High-Purity Diamond Integration on β-Ga2​O3​ via Microwave Plasma CVD for Enhanced Thermal Management

LPCVD based Plasma Damage Free in situ etching of β-Ga2​O3​ using Solid Source Gallium

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium