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physics.app-ph2026
Vertical -GaO Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching
Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan
A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for -GaO$…
physics.app-ph2026
Fast-Neutron Irradiation Effect in Heteroepitaxial -GaO Schottky Diodes Fabricated on Low-Cost Sapphire Substrates
Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2
In this work, we investigate the response of Ni/-GaO Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…
physics.app-ph2026
HVPE Growth of Si-Doped -GaO on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties
Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1
Si-doped -GaO films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…