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A. Bhuiyan

11 papers hereh-index 17 citations15 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • last author9

Across the 9 of 11 papers where every author was matched, so the position is known.

fields
  • physics.app-ph6
  • cond-mat.mtrl-sci5
same name
  • A. Bhuiyan — 11 papers, h 20
  • A. Bhuiyan — 1 paper, h 4
  • A. Bhuiyan — 1 paper, h 4
  • A. Bhuiyan — 1 paper, h 28

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20242026
most citedRadiation Resilience of β-Ga2​O3​ Schottky Barrier Diodes Under High Dose Gamma Radiation

24 citations · 33 across the 10 of their papers we have counts for

collaborators
Showing 2026 · physics.app-phShow all

3 papers · 2 filters

physics.app-ph2026

Vertical β-Ga2​O3​ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan

A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for β-Ga2​O$…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/β-Ga2​O3​ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…

physics.app-ph2026

HVPE Growth of Si-Doped β-Ga2​O3​ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped β-Ga2​O3​ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

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