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most citedRadiation Resilience of -GaO Schottky Barrier Diodes Under High Dose Gamma Radiation

24 citations · 33 across the 10 of their papers we have counts for

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physics.app-ph2026

Vertical -GaO Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan

A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for -GaO$…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial -GaO Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/-GaO Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…

physics.app-ph2026

HVPE Growth of Si-Doped -GaO on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped -GaO films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

physics.app-ph2025

High-Purity Diamond Integration on -GaO via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with -GaO presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conduc…

physics.app-ph2025★ 9 cited

LPCVD based Plasma Damage Free in situ etching of -GaO using Solid Source Gallium

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates a novel in situ etching technique for -GaO using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etchi…

physics.app-ph2024★ 24 cited

Radiation Resilience of -GaO Schottky Barrier Diodes Under High Dose Gamma Radiation

Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti +1

A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cum…