24 citations · 33 across the 10 of their papers we have counts for
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Vertical -GaO Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching
Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan
A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for -GaO$…
Fast-Neutron Irradiation Effect in Heteroepitaxial -GaO Schottky Diodes Fabricated on Low-Cost Sapphire Substrates
Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2
In this work, we investigate the response of Ni/-GaO Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…
HVPE Growth of Si-Doped -GaO on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties
Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1
Si-doped -GaO films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…
High-Purity Diamond Integration on -GaO via Microwave Plasma CVD for Enhanced Thermal Management
Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1
The integration of diamond with -GaO presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conduc…
LPCVD based Plasma Damage Free in situ etching of -GaO using Solid Source Gallium
Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan
This work demonstrates a novel in situ etching technique for -GaO using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etchi…
Radiation Resilience of -GaO Schottky Barrier Diodes Under High Dose Gamma Radiation
Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti +1
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cum…