4 papers
The First Switch Effect in Ferroelectric Field-Effect Transistors
Priyankka Ravikumar, Prasanna Venkatesan, Chinsung Park +7
In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We…
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
Nashrah Afroze, Jihoon Choi, Salma Soliman +10
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-l…
Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels
Junmo Lee, Chengyang Zhang, Tae-Hyeon Kim +2
Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-gener…
Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
Sungwon Cho, Po-Kai Hsu, Kiseok Lee +3
Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the…