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Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels
Junmo Lee, Chengyang Zhang, Tae-Hyeon Kim +2
Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-gener…
Revealing Phonon Bridge Effect for Amorphous vs Crystalline Metal-Silicide Layers at Si/Ti Interfaces by a Machine Learning Potential
Mayur Singh, Lokanath Patra, Chengyang Zhang +4
Metal-semiconductor interfaces play a central role in micro and nano-electronic devices as heat dissipation or temperature drop across these interfaces can significantly affect dev…
Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
Sungwon Cho, Po-Kai Hsu, Kiseok Lee +3
Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the…
Cryogenic Characterization of Ferroelectric Non-volatile Capacitors
Madhav Vadlamani, Dyutimoy Chakraborty, Jianwei Jia +5
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and hig…