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Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC
Prasanna Venkatesan, Taeyoung Song, Yueyun Chen +22
We report the experimental observation of discrete ferroelectric switching down to 0.475 nm x 0.475 nm in HfO2-based ferroelectrics using correlated STEM electron beam induced curr…
Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during C Post-Processing Forming Gas Annealing
Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar +13
We investigate the impact of a monolithic three-dimensional (M3D) integration process-critical C post-processing forming gas anneal (FGA) on the electrical performance,…
A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node
Po-Chuan Wang, Dongwon Jang, Eknath Sarkar +5
We propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects…
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
System-Technology Co-Optimization of Bitline Routing and Bonding Pathways in Monolithic 3D DRAM Architectures
Kiseok Lee, Sungwon Cho, Seongkwang Lim +2
3D DRAM has emerged as a promising approach for continued density scaling, but its viability is limited by routing and hybrid bonding constraints to periphery, which may degrade se…
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
The First Switch Effect in Ferroelectric Field-Effect Transistors
Priyankka Ravikumar, Prasanna Venkatesan, Chinsung Park +7
In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We…
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
Nashrah Afroze, Jihoon Choi, Salma Soliman +10
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-l…