48 citations · 65 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2009★ 48 cited
Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
V. Ryzhii, M. Ryzhii, V. Mitin +1
We propose and analize a graphene tunneling transit time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer by the applied g…
cond-mat.mes-hall2008★ 16 cited
High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor
M. Ryzhii, A. Satou, V. Ryzhii +1
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of a…
cond-mat.mes-hall2007★ 1 cited
Plasma effects in a micromachined floating-gate high-electron-mobility transistor
Y. Hu, I. Hagiwara, I. Khmyrova +3
We study plasma effects in a micromachined high-electron mobility transistor (HEMT) with the microcantilever serving as the gate using the developed a model. The model accounts for…