157 citations · 1.4k across the 58 of their papers we have counts for
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Device Model for Graphene Bilayer Field-Effect Transistor
V. Ryzhii, M. Ryzhii, A. Satou +2
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts…
High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor
M. Ryzhii, A. Satou, V. Ryzhii +1
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of a…
Device Model for Graphene Nanoribbon Phototransistor
Victor Ryzhii, Vladimir Mitin, Maxim Ryzhii +2
An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain conta…
Current-voltage characteristics of a graphene nanoribbon field-effect transistor
V. Ryzhii, M. Ryzhii, A. Satou +1
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrat…