activity
20042020
most citedElectrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

119 citations · 1.5k across the 44 of their papers we have counts for

collaborators
Showing 2006Show all

6 papers · 1 filter

cond-mat.mes-hall2006★ 46 cited

Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect

M. Kawamura, H. Takahashi, K. Sugihara +3

We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of elect…

cond-mat.mes-hall2006★ 84 cited

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

K. Hamaya, S. Masubuchi, M. Kawamura +7

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ show…

cond-mat.mes-hall2006★ 1 cited

Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

S. Masubuchi, K. Hamaya, T. Machida

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electro…

cond-mat.mes-hall2006★ 13 cited

Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

S. Masubuchi, K. Hamaya, T. Machida

A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in…

cond-mat.mes-hall2006★ 6 cited

Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

K. Hamaya, S. Masubuchi, K. Hirakawa +5

We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved…

cond-mat.mtrl-sci2006★ 36 cited

Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration

K. Hamaya, T. Watanabe, T. Taniyama +3

We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [11…