119 citations · 1.5k across the 44 of their papers we have counts for
6 papers · 1 filter
Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of CoFeSi and FeSi
K. Hamaya, N. Hashimoto, S. Oki +3
We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, CoFeSi (CFS) or FeSi (FS). T…
Electric-field control of spin accumulation signals in silicon at room temperature
Y. Ando, Y. Maeda, K. Kasahara +8
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…
Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
K. Kasahara, S. Yamada, K. Sawano +2
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the FeSi/Ge(111) heterostructure developed originally, we ca…
Room-temperature generation of giant pure spin currents using CoFeSi spin injectors
T. Kimura, N. Hashimoto, S. Yamada +2
Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-gene…
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K. Kasahara, Y. Baba, K. Yamane +6
Using high-quality FeSi/-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an -type germanium (-Ge) channel. In the three- or two-terminal volta…
Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Y. Ando, K. Kasahara, K. Yamane +6
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The…