234 citations · 5.3k across the 102 of their papers we have counts for
6 papers · 2 filters
Transport in two-dimensional modulation doped semiconductor structures
S. Das Sarma, E. H. Hwang, S. Kodiyalam +2
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the…
Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
S. Das Sarma, E. H. Hwang, K. Kechedzhi +1
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for…
Mobility versus quality in 2D semiconductor structures
S. Das Sarma, E. H. Hwang
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating…
Effective field theory, three-loop perturbative expansion, and their experimental implications in graphene many-body effects
Edwin Barnes, E. H. Hwang, R. E. Throckmorton +1
Many-body electron-electron interaction effects are theoretically considered in monolayer graphene from a continuum effective field-theoretic perspective by going beyond the standa…
The 2D metal-insulator transition as a strong localization induced crossover phenomenon
S. Das Sarma, E. H. Hwang
Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some…
Short-range disorder effects on electronic transport in 2D semiconductor structures
S. Das Sarma, E. H. Hwang
We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder whic…