234 citations · 5.3k across the 102 of their papers we have counts for
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Diffusive density response of electrons in anisotropic multiband systems
Jeonghyeon Suh, Sunghoon Kim, E. H. Hwang +1
We explicitly calculate the density-density response function with conserving vertex corrections for anisotropic multiband systems in the presence of impurities including long-rang…
Impurity scattering induced carrier transport in twisted bilayer graphene
E. H. Hwang, S. Das Sarma
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We…
Plasmon-pole approximation for many-body-effects in extrinsic graphene
E. H. Hwang, Robert E. Throckmorton, S. Das Sarma
We develop the plasmon-pole approximation (PPA) theory for calculating the carrier self-energy of extrinsic graphene as a function of doping density within analytical approximation…
Diluted magnetic Dirac-Weyl materials: Susceptibility and ferromagnetism in three-dimensional chiral gapless semimetals
Sanghyun Park, Hongki Min, E. H. Hwang +1
We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semime…
Ferromagnetism in chiral multilayer 2D semimetals
Hongki Min, E. H. Hwang, S. Das Sarma
We calculate the temperature dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semi…
Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
Binhui Hu, M. M. Yazdanpanah, B. E. Kane +2
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same…
Transport in two-dimensional modulation doped semiconductor structures
S. Das Sarma, E. H. Hwang, S. Kodiyalam +2
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the…
Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
S. Das Sarma, E. H. Hwang, K. Kechedzhi +1
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for…
Mobility versus quality in 2D semiconductor structures
S. Das Sarma, E. H. Hwang
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating…
Effective field theory, three-loop perturbative expansion, and their experimental implications in graphene many-body effects
Edwin Barnes, E. H. Hwang, R. E. Throckmorton +1
Many-body electron-electron interaction effects are theoretically considered in monolayer graphene from a continuum effective field-theoretic perspective by going beyond the standa…
The 2D metal-insulator transition as a strong localization induced crossover phenomenon
S. Das Sarma, E. H. Hwang
Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some…
Short-range disorder effects on electronic transport in 2D semiconductor structures
S. Das Sarma, E. H. Hwang
We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder whic…
Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
S. Das Sarma, E. H. Hwang, Qiuzi Li
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as ar…
Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems
S. Das Sarma, E. H. Hwang
We theoretically consider the carrier density dependence of low-temperature electrical conductivity in high-quality and low-disorder two-dimensional (2D) `metallic' electronic syst…
Surface polar optical phonon interaction induced many-body effects and hot-electron relaxation in graphene
E. H. Hwang, S. Das Sarma
We theoretically study various aspects of the electron-surface optical phonon interaction effects in graphene on a substrate made of polar materials. We calculate the electron self…
Electronic transport in two dimensional Si:P -doped layers
E. H. Hwang, S. Das Sarma
We investigate theoretically 2D electronic transport in Si:P -doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant i…
Density dependent electrical conductivity in suspended graphene: Approaching the Dirac point in transport
S. Das Sarma, E. H. Hwang
We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperatur…
Valley-dependent 2D transport in Si-MOSFETs
E. H. Hwang, S. Das Sarma
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion…
Gate tunable quantum transport in double layer graphene
K. Kechedzhi, E. H. Hwang, S. Das Sarma
We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the met…
Interplay between phonon and impurity scattering in 2D hole transport
Hongki Min, E. H. Hwang, S. Das Sarma
We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing…
Velocity renormalization and anomalous quasiparticle dispersion in extrinsic graphene
S. Das Sarma, E. H. Hwang
Using many-body diagrammatic perturbation theory we consider carrier density- and substrate-dependent many-body renormalization of doped or gated graphene induced by Coulombic elec…
Effect of charged impurity correlation on transport in monolayer and bilayer graphene
Qiuzi Li, E. H. Hwang, E. Rossi
We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular…
The compressibility of graphene
D. S. L. Abergel
We present a review of the electronic compressibility of monolayer and bilayer graphene. We focus on describing theoretical calculations of the effects of electron--electron intera…
2D transport and screening in topological insulator surface states
S. Adam, E. H. Hwang, S. Das Sarma
We study disorder effects on the surface states of the topological insulator BiSe close to the topologically protected crossing point. Close to charge neutrality, local flu…