Short-range disorder effects on electronic transport in 2D semiconductor structures

Abstract

We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor systems. We give results for unscreened and screened short-range disorder effects on 2D mobility in quantum wells and heterostructures, comparing with the results for Coulomb disorder and finding that the asymptotic high-density mobility is always limited by short-range disorder which, in general, becomes effectively stronger with increasing `carrier density' in contrast to Coulomb disorder. We also predict an intriguing re-entrant metal-insulator transition at very high carrier densities in Si-MOSFETs driven by the short-range disorder associated with surface roughness scattering.

5 pages, 4 figures

References in corpus (6)

• Carrier transport in 2D graphene layers
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Experimental studies of the fractional quantum Hall effect in the first excited Landau level
• Fractional Quantum Hall Effect in the Second Landau Level
• Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
• Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells

Cited by in corpus (11)

• Recent Experimental Progress of Fractional Quantum Hall Effect: 5/2 Filling State and Graphene
• Weak Localization in Electric-Double-Layer Gated Few-layer Graphene
• Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS${}_2$
• Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene
• Surface roughness scattering in multisubband accumulation layers
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Metallic State of Low Mobility Silicon at High Carrier density induced by an Ionic Liquid
• Fractional quantum Hall effect at the filling factor $\nu =5/2$
• Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
• Roughness scattering induced insulator-metal-insulator transition in a quantum wire
• Bound state-continuum resonance transition in a shallow quantum well