Metallic State of Low Mobility Silicon at High Carrier density induced by an Ionic Liquid

Abstract

High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the carrier density was increased beyond $10^{13}{\text{cm}}^{-2}$.

References in corpus (8)

• Possible Metal/Insulator Transition at B=0 in Two Dimensions
• The Metallic-Like Conductivity of a Two-Dimensional Hole System
• Transport in strongly correlated two dimensional electron fluids
• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• Mechanism for the Large Conductance Modulation in Electrolyte-gated Thin Gold Films
• Short-range disorder effects on electronic transport in 2D semiconductor structures
• Absence of Floating Delocalized States in a Two-Dimensional Hole Gas
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs

Cited by in corpus (4)

• A full superconducting dome of strong Ising protection in gated monolayer WS2
• Surface roughness scattering in multisubband accumulation layers
• Hopping Conduction via Ionic Liquid Induced Silicon Surface States
• Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in ${\text{SrTiO}}_3$