Hopping Conduction via Ionic Liquid Induced Silicon Surface States

Abstract

In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}{\text{cm}}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hopping between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hopping conductivity resembles that of well studied ${\text{Na}}^{+}$ implanted Si MOSFETs.

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• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• A high-mobility electronic system at an electrolyte-gated oxide surface
• Anomalously large capacitance of an ionic liquid described by the restricted primitive model
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Cited by in corpus (2)

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