activity
20062016
most citedSpin Hall effect transistor

334 citations · 1.2k across the 29 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

21 papers · 1 filter

cond-mat.mes-hall2016★ 30 cited

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

T. Janda, P. E. Roy, R. M. Otxoa +9

Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high…

cond-mat.mes-hall2016★ 4 cited

Efficient conversion of light to charge and spin in Hall-bar microdevice

L. Nádvorník, J. A. Haigh, K. Olejník +4

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. I…

cond-mat.mes-hall2015★ 5 cited

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

J. A. Haigh, C. Ciccarelli, A. C. Betz +4

The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin…

cond-mat.mes-hall2015

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

M. F. Gonzalez-Zalba, C. Ciccarelli, L. P. Zarbo +6

We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium…

cond-mat.mes-hall2015★ 132 cited

Electrical manipulation of a ferromagnet by an antiferromagnet

V. Tshitoyan, C. Ciccarelli, A. P. Mihai +5

We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the…

cond-mat.mes-hall2014★ 77 cited

Magnonic Charge Pumping via Spin-Orbit Coupling

Chiara Ciccarelli, Kjetil M. D. Hals, Andrew Irvine +5

The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-trans…

cond-mat.mes-hall2014★ 38 cited

Optical spin transfer torque driven domain wall motion in ferromagnetic semiconductor

A. J. Ramsay, P. E. Roy, J. A. Haigh +6

We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. Firstly, photocarrier spin…

cond-mat.mes-hall2013★ 64 cited

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

T. D. Skinner, M. Wang, A. T. Hindmarch +5

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectificatio…

cond-mat.mes-hall2013★ 5 cited

Observation of a Berry phase anti-damping spin-orbit torque

H. Kurebayashi, Jairo Sinova, D. Fang +10

Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one…

cond-mat.mes-hall2012★ 12 cited

Enhanced Inverse Spin-Hall Effect in Ultrathin Ferromagnetic/Normal Metal Bilayers

T. D. Skinner, H. Kurebayashi, D. Fang +6

We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distingu…

cond-mat.mes-hall2012★ 14 cited

Spin gating electrical current

C. Ciccarelli, L. P. Zarbo, A. C. Irvine +5

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to…

cond-mat.mes-hall2012

Spin Hall transistor with electrical spin injection

K. Olejnik, J. Wunderlich, A. C. Irvine +4

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injectio…

cond-mat.mes-hall2011★ 17 cited

Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell

J. D. Mar, X. L. Xu, J. J. Baumberg +3

We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embe…

cond-mat.mes-hall2010★ 13 cited

Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

Xiulai Xu, Andrew C. Irvine, Yang Yang +2

We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations ca…

cond-mat.mes-hall2010★ 334 cited

Spin Hall effect transistor

J. Wunderlich, B. G. Park, A. C. Irvine +6

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing techn…

cond-mat.mes-hall2008★ 71 cited

Spin-injection Hall effect in a planar photovoltaic cell

J. Wunderlich, A. C. Irvine, Jairo Sinova +5

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical de…

cond-mat.mes-hall2008★ 7 cited

Magneto-optical and micromagnetic simulation study the current driven domain wall motion in ferromagnetic (Ga,Mn)As

K. Y. Wang, A. C. Irvine, R. P. Campion +4

We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical K…

cond-mat.mes-hall2008

Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

K Y Wang, A C Irvine, J Wunderlich +6

We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic an…

cond-mat.mes-hall2007

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

A. W. Rushforth, K. Výborný, C. S. King +11

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield dir…

cond-mat.mes-hall2007

Magnetocrystalline anisotropy controlled local magnetic configurations in (Ga,Mn)As spin-transfer-torque microdevices

J. Wunderlich, A. C. Irvine, J. Zemen +11

The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields b…

cond-mat.mes-hall2007★ 125 cited

Anisotropic Magnetoresistance components in (Ga,Mn)As

A. W. Rushforth, K. Výborný, C. S. King +11

Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic phy…