activity
20062016
most citedSpin Hall effect transistor

334 citations · 1.2k across the 29 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2010★ 17 cited

Strain control of magnetic anisotropy in (Ga,Mn)As microbars

C. King, J. Zemen, K. Olejník +8

We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive la…

cond-mat.mtrl-sci2010★ 25 cited

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

K. Y. Wang, K. W. Edmonds, A. C. Irvine +9

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition tempe…

cond-mat.mtrl-sci2010★ 2 cited

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

K. Y. Wang, K. W. Edmonds, A. C. Irvine +7

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferre…

cond-mat.mtrl-sci2009★ 32 cited

Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires

A. A. Minkevich, E. Fohtung, T. Slobodskyy +7

Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining th…

cond-mat.mtrl-sci2008★ 23 cited

Low voltage control of ferromagnetism in a semiconductor p-n junction

M. H. S. Owen, J. Wunderlich, V. Novak +8

The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current infor…

cond-mat.mtrl-sci2008★ 65 cited

Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As

E. De Ranieri, A. W. Rushforth, K. Vyborny +8

It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter…

cond-mat.mtrl-sci2008★ 114 cited

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

K. Olejnik, M. H. S. Owen, V. Novak +4

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties i…