256 citations · 745 across the 7 of their papers we have counts for
7 papers
Asymmetrical contact scaling and measurements in MoS2 FETs
Zhihui Cheng, Jonathan Backman, Huairuo Zhang +8
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better…
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
Fully printed, all-carbon, recyclable electronics
Nicholas X. Williams, George Bullard, Nathaniel Brooke +2
The rapid growth of electronic waste must be curtailed to prevent accumulation of environmentally and biologically toxic materials, which are essential to traditional electronics.…
Immunity to Scaling in MoS2 Transistors Using Edge Contacts
Zhihui Cheng, Katherine Price, Shreya Singh +5
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostat…
A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization
Chi-Shuen Lee, Eric Pop, Aaron D. Franklin +2
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunnelin…
A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements
Chi-Shuen Lee, Eric Pop, Aaron D. Franklin +2
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-v…