256 citations · 745 across the 7 of their papers we have counts for
4 papers · 1 filter
Asymmetrical contact scaling and measurements in MoS2 FETs
Zhihui Cheng, Jonathan Backman, Huairuo Zhang +8
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better…
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
Immunity to Scaling in MoS2 Transistors Using Edge Contacts
Zhihui Cheng, Katherine Price, Shreya Singh +5
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostat…
Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer
Rakesh Voggu, Chandra Sekhar Rout, Aaron D. Franklin +2
Interaction of single-walled carbon nanotubes with electron donor and acceptor molecules causes significant changes in the electronic and Raman spectra, the relative proportion of…