activity
20082022
most citedA Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

256 citations · 745 across the 7 of their papers we have counts for

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Showing 2022Show all

2 papers · 1 filter

cond-mat.mtrl-sci2022

Asymmetrical contact scaling and measurements in MoS2 FETs

Zhihui Cheng, Jonathan Backman, Huairuo Zhang +8

Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better…

cond-mat.mtrl-sci2022★ 184 cited

How to Report and Benchmark Emerging Field-Effect Transistors

Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…