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20082022
most citedA Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

256 citations · 745 across the 7 of their papers we have counts for

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Showing 2018Show all

1 paper · 1 filter

cond-mat.mtrl-sci2018★ 141 cited

Immunity to Scaling in MoS2 Transistors Using Edge Contacts

Zhihui Cheng, Katherine Price, Shreya Singh +5

Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostat…